| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of forming two or more device separation parts which differ mutually in the recess amounts responding to the demand performance of a semiconductor device on the same semiconductor substrate. SOLUTION: A groove 4 for specifying a plane outline of an active region is formed by etching a semiconductor substrate 1; in a formation region of peripheral circuit high break-down voltage system MIS, a smaller extraction pattern is formed than an active region, after depositing an insulating film 5 which embeds the inside of the groove 4; in a memory cell and in a formation region of peripheral circuit low break-down voltage system MIS, a resist pattern consisting of a larger extraction pattern than an active region is formed and used as a mask on the active region; an insulating film 5 is etched which is embedded to the inside of the groove 4 of the formation region of the memory cell and the peripheral circuit low break-down voltage system MIS; and then, the insulating film 5 is polished so that the insulating film 5 may be embedded to the inside of the groove 4. COPYRIGHT: (C)2006,JPO&NCIPI
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