发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To improve coverage in an unlanded part of a via hole. SOLUTION: When an opening 14 is formed in an interlayer insulating film 13 where a lower wiring layer 12 is exposed, the selection ratio of the interlayer insulating layer 13 is lowered, with respect to the lower wiring layer 12. By having the end of the lower wiring layer 12 etched via the opening 14, the base of the opening 14 is made to incline toward the unlanded part 14a. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006228945(A) 申请公布日期 2006.08.31
申请号 JP20050040534 申请日期 2005.02.17
申请人 SEIKO EPSON CORP 发明人 SHIINO TAKESHI
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项
地址