| 摘要 |
PROBLEM TO BE SOLVED: To realize a flash memory wherein a leakage current is reduced through an inter-gate-electrode insulating film thereof. SOLUTION: This flash memory comprises a floating gate electrode 3, the polycrystalline inter-gate-electrode insulating film 5 provided on the floating gate electrode 3 whose minimum film thickness being≥5 nm, and a control gate electrode 4 provided on the polycrystalline inter-gate-electrode insulating film 5. COPYRIGHT: (C)2006,JPO&NCIPI
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