| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows dry etching to be performed accurately, in a short time and at a low cost. SOLUTION: On a silicon substrate 101, a silicon oxide film 102, a polysilicon layer 103, and a resist 104 are formed in this order. The polysilicon layer 103 is formed (Figure (b)). Then, a silicon oxide film is deposited on the silicon oxide film 102 and the polysilicon layer 103, and is planarized (Figure (c)), and then a silicon nitride film 105 is formed (Figure (d)). Moreover, an infrared detection layer is formed on the silicon nitride film 105 (not shown). Next, the arm structure of a membrane is patterned using a photolithographic mask 106 (Figure (f)). After removing the silicon oxide film on the surface of the sacrificial layer 103 using a hydrofluoric acid, the polysilicon layer 103 is etched using a chlorine fluoride at the etching temperature of 200°C or lower (Figure (h)). COPYRIGHT: (C)2006,JPO&NCIPI
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