| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, etc. which can suppress a poor contact between a source and a drain electrode and a semiconductor film. SOLUTION: The semiconductor film 30 is formed which is thicker at both ends 30s and 30d than in a flat portion 30c. Then, a gate insulating film 40 is so formed that both ends 30s and 30d may be exposed. At both ends 30s and 30d, intermediate electrodes 50s and 50d for connecting the source and drain electrodes 60s and 60d to the source and drain regions are formed. Then, an interlayer insulating film 50 is so formed as to cover the intermediate electrodes 50s and 50d, and contact holes reaching the intermediate electrodes 50s and 50d are formed in the interlayer insulating film 50. COPYRIGHT: (C)2006,JPO&NCIPI
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