发明名称 |
BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor crystal includes a recombination-inhibiting semiconductor layer (17) of a second conductive type that is disposed in the vicinity of the surface between a base contact region (16) and emitter regions (14) and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current.Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced. |
申请公布号 |
WO2006135031(A2) |
申请公布日期 |
2006.12.21 |
申请号 |
WO2006JP312077 |
申请日期 |
2006.06.09 |
申请人 |
HONDA MOTOR CO., LTD.;NONAKA, KEN-ICHI |
发明人 |
NONAKA, KEN-ICHI |
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