发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED BY SUCH METHOD |
摘要 |
<p>A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided. A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.</p> |
申请公布号 |
KR20070046912(A) |
申请公布日期 |
2007.05.03 |
申请号 |
KR20077005104 |
申请日期 |
2005.09.01 |
申请人 |
ROHM CO., LTD.;ULVAC, INC.;MITSUI CHEMICALS, INC. |
发明人 |
OKU YOSHIAKI;FUJII NOBUTOSHI;KOHMURA KAZUO |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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