| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable magnetoresistance sensor device having excellent productivity and magnetoresistant characteristic, and manufactured inexpensively. SOLUTION: This magnetoresistance sensor device is provided with a substrate 100, a signal processing circuit 5 formed on the substrate 100, a flattening film 6 for flattening the signal processing circuit 5, a silicon nitride film 7 formed on the flattened signal processing circuit 5, and a magnetoresistance sensor element 9 formed on the silicon nitride film 7. The flattening film 6 is preferably an SOG film. COPYRIGHT: (C)2008,JPO&INPIT
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