| 摘要 |
PROBLEM TO BE SOLVED: To provide a new compound having good vaporization characteristics, and being a raw material for producing a metal ruthenium thin film by a CVD method or an ALD method under a condition in a non-oxidizing atmosphere free from an oxidative reactant such as oxygen, to provide a method for producing the compound, a ruthenium-containing thin film produced by using the compound, and a method for producing the thin film. SOLUTION: The ruthenium-containing thin film is produced by producing the ruthenium compound represented by general formula (1), for example, by the reaction or the like of di-μ-chloro-bis[chloro(η<SP>6</SP>-arene)ruthenium] with 1,3-cyclohexadienes, and using the compound as a raw material. In the formula, R<SP>1</SP>and R<SP>2</SP>are each independently a hydrogen atom or a 1-6C alkyl group; with the proviso that when R<SP>2</SP>is a hydrogen atom, R<SP>1</SP>is not the hydrogen atom or a methyl group. COPYRIGHT: (C)2009,JPO&INPIT
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