| 发明名称 |
Intermediate Layer for Copper Structuring and Methods of Formation Thereof |
| 摘要 |
A method of forming a metallization layer over a semiconductor substrate includes depositing a blanket layer of a diffusion barrier liner over an inter level dielectric layer, and depositing a blanket layer of an intermediate layer over the diffusion barrier liner. A blanket layer of a power metal layer including copper is deposited over the intermediate layer. The intermediate layer includes a solid solution of a majority element and copper. The intermediate layer has a different etch selectivity from the power metal layer. After depositing the power metal layer, structuring the power metal layer, the intermediate layer, and the diffusion barrier liner. |
| 申请公布号 |
US2016218033(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514607708 |
申请日期 |
2015.01.28 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
Joshi Ravi Keshav;Steinbrenner Juergen;Fachmann Christian;Fischer Petra;Roth Roman |
| 分类号 |
H01L21/768;H01L21/3213;H01L23/532;H01L21/285 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a metallization layer over a semiconductor substrate, the method comprising:
depositing a blanket layer of a diffusion barrier liner over an inter level dielectric layer; depositing a blanket layer of an intermediate layer over the diffusion barrier liner; depositing a blanket layer of a power metal layer comprising copper over the intermediate layer, wherein the intermediate layer comprises a solid solution of a majority element and copper, wherein the intermediate layer has a different etch selectivity from the power metal layer; and after depositing the power metal layer, structuring the power metal layer, the intermediate layer, and the diffusion barrier liner. |
| 地址 |
Neubiberg DE |
