Memory device having a tunnel barrier layer in a memory cell, and electronic device including the same

摘要

An electronic device includes a semiconductor memory. The semiconductor memory includes a plurality of first lines extending in a first direction, a plurality of second lines extending in a second direction crossing the first direction, a resistance variable layer interposed between the first lines and the second lines, a tunnel barrier layer interposed between the resistance variable layer and the first lines, and an intermediate electrode layer interposed between the resistance variable layer and the tunnel barrier layer. The tunnel barrier layer and the intermediate electrode layer overlap with at least two neighboring intersection regions of the first lines and the second lines.

主权项

1. An electronic device including a semiconductor memory, the semiconductor memory comprising:
a plurality of first lines extending in a first direction; a plurality of second lines extending in a second direction crossing the first direction; a resistance variable layer interposed between the first lines and the second lines, and overlapping with at least one of a plurality of intersection regions defined by the first lines and the second lines; a tunnel barrier layer interposed between the resistance variable layer and the first lines; and an intermediate electrode layer interposed between the resistance variable layer and the tunnel barrier layer, wherein each of the tunnel barrier layer and the intermediate electrode layer overlaps with each of the first lines, and is divided into two or more portions in the first direction, and wherein each of the two or more portions overlaps with at least two neighboring intersection regions of the plurality of intersection regions and a region between the two neighboring intersection regions.