Techniques for ion implantation of non-planar field effect transistors

摘要

A method of forming a fin field effect transistor (finFET) device includes forming a fin structure on a substrate, the substrate comprising a semiconductor material and forming a replacement gate cavity comprising an exposed portion of the fin structure and a sidewall portion adjacent the exposed portion, wherein the exposed portion of the fin structure defines a channel region. The method further includes performing at least one implant into the exposed portion of the fin structure.

主权项

1. A method of forming a fin field effect transistor (finFET) device, comprising:
forming a fin structure on a substrate, the substrate comprising a semiconductor material; forming a replacement gate cavity comprising an exposed portion of the fin structure and a sidewall portion adjacent the exposed portion, wherein the exposed portion of the fin structure defines a channel region, and wherein the forming the replacement gate cavity comprises:
depositing a dummy gate material on the fin structure;etching the dummy gate material to form a dummy gate;forming the sidewall portion on the dummy gate; andselectively etching the dummy gate without removing the sidewalls; and performing at least one implant into the exposed portion of the fin structure.