Semiconductor inspection system and methods of inspecting a semiconductor device using the same

摘要

A semiconductor inspection system including an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer and an image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface may be provided.

主权项

1. A semiconductor inspection system, comprising:
an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer; a mass spectrometry unit configured to measure a mass spectrum of secondary ions from the sample wafer, while the surface of the sample wafer is etched; a controller configured to,
detect an etch stop material by analyzing the secondary ions measured by the mass spectrometry unit,generate, considering a time difference between the etching by the ion beam milling unit and the measuring by the mass spectrometry unit, a detection signal when a detected intensity of the etch stop material reaches a threshold, and control, in response to the detection signal, the ion beam milling unit to terminate the etching; and an image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface.