Memory devices with improved refreshing operation

摘要

A method and a system for memory cell programming and erasing with refreshing operation are disclosed. The system includes a selecting module, a processing module and a refresh module. In the method, at first, a target memory cell from a plurality of memory cells in a memory device is selected. Thereafter, the target memory cell belonging to a line of the matrix is programmed or erased by applying a selecting voltage on the target memory cell and a location-related memory cell belonging to the line of the matrix. Then, a refreshing operation to refresh the location-related cell is performed

主权项

1. A method, comprising:
selecting a target memory cell from a plurality of memory cells of a matrix in a memory device; programming or erasing the target memory cell belonging to a line of the matrix by applying a selecting voltage to the target memory cell and a location-related memory cell belonging to the line of the matrix; and performing a refreshing operation to refresh the location-related memory cell, wherein the refreshing operation comprises:
reading data stored in the location-related memory cell;writing the data back to the location-related memory cell;determining if a voltage level of the location-related memory cell is lower than a predetermined verifying voltage level, or if a current level of the location-related memory cell is lower than a predetermined verifying current level; andrewriting the data back to the location-related memory cell, when the voltage level of the location-related memory cell is higher than or equal to the predetermined verifying voltage level or the current level of the location-related memory cell is lower than the predetermined verifying current level.