发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR PACKAGE OF WAFER LEVEL
摘要 A method of manufacturing and a structure of a semiconductor device has an I/O terminal whereby when individual semiconductor chips are separated from the semiconductor wafer manufactured according to this invention, the terminals are exposed on the edges of the semiconductor chip allowing for the interconnection of the terminals when the semiconductor chips are stacked. The bump electrode is formed using metal masks and magnets by mounting a solder ball on an aperture of a first mask to form the solder bump on an electrode pad provided on a semiconductor wafer. A conductive material forms a conductive pattern between the solder bumps of the individual semiconductor chips using an aperture of a second mask. The individual semiconductor chips which are separated from the semiconductor wafer are then easily stacked and packaged by use of the I/O terminals on the sides of the individual semiconductor chips.
申请公布号 KR100245257(B1) 申请公布日期 2000.02.15
申请号 KR19930000349 申请日期 1993.01.13
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 KIM, GU-SUNG
分类号 H01L23/02;H01L23/485;H01L25/065 主分类号 H01L23/02
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