发明名称 WAFER LEVEL SEMICONDUCTOR CHIP PACKAGES AND METHODS OF MAKING THE SAME
摘要 <p>A wafer (20) having a front surface and contacts (28) exposed at the front surface is treated by forming electrically conductive risers (30) projecting upwardly from the contacts as, for example, by electroless plating, and then applying a flowable material over the front surface of the device, around the risers, to form a dielectric layer (36) with the risers exposed at a top surface (38) of the dielectric layer facing away from the device. Traces (42). extending over the top surface of the dielectric layer may be formed, and may be connected to at least some of the risers.</p>
申请公布号 WO2007133806(A3) 申请公布日期 2008.04.24
申请号 WO2007US11747 申请日期 2007.05.15
申请人 TESSERA, INC.;LIEW, VICTOR;HABA, BELGACEM;HUMPSTON, GILES 发明人 LIEW, VICTOR;HABA, BELGACEM;HUMPSTON, GILES
分类号 H01L21/60;H01L23/48 主分类号 H01L21/60
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