CRYSTALLINITY EVALUATION DEVICE OF SILICON SEMICONDUCTOR THIN FILM AND CRYSTALLINITY EVALUATION METHOD USING IT

摘要

PROBLEM TO BE SOLVED: To provide a crystallinity evaluation method of a silicon semiconductor thin film capable of suppressing the deterioration of crystallinity evaluating precision caused by the irregularity of the thickness dimension of a base material having light perviousness.

SOLUTION: This crystallinity evaluation device of the silicon semiconductor thin film includes an exciting laser 1 for irradiating a predetermined irradiation region of the silicone semiconductor thin film 5a with carrier excitation light, a semiconductor laser 10 for radiating infrared rays, a high frequency pulse power supply 18 capable of irradiating the semiconductor laser 10 with a plurality of kinds of different infrared rays by supplying a current modified in intensity to the semiconductor laser 10, a photodetector 13 which detects the intensity of the reflected light reflected by the silicone semiconductor thin film 5a or the base material 5b and contains at least two kinds of the infrared rays of a plurality of kinds of infrared rays to output its detection signal, and a signal processor 9 for forming data for evaluating the crystallinity of the silicon semiconductor thin film 5a on the basis of the detection signal.

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