发明名称 Pressure sensor especially of semiconductor type
摘要 The pressure sensor has a sensing body (2) with a pressure sensitive diaphragm (2a), a silicon chip (4), a glass coating (5) bonded to the diaphragm, and a characteristic bubble formed in the glass coating within predefined manufacturing tolerances. The sensing body is mounted in a housing (1) when the bubble has been formed in the glass coating and it has been established that the bubble is within the manufacturing tolerances. An Independent claim is also included for a method of producing a semiconducting pressure sensor.
申请公布号 DE19928547(A1) 申请公布日期 1999.12.30
申请号 DE1999128547 申请日期 1999.06.22
申请人 DENSO CORP., KARIYA 发明人 TOYODA, INAO;HAMAMOTO, KAZUAKI;SUZUKI, YASUTOSHI
分类号 G01L9/04;G01L9/00;H01L29/84;(IPC1-7):H01L21/58;G01L9/02;H01L27/20;G01N21/88;H01L21/66 主分类号 G01L9/04
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