SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF

摘要

A semiconductor process including the following step is provided. A sacrificial layer is formed in a substrate. The sacrificial layer and the substrate are etched to form a trench in the sacrificial layer and the substrate. A first isolation material fills the trench, thereby a first isolation structure being formed. The sacrificial layer is patterned to form a plurality of sacrificial patterns. A plurality of spacers are formed beside the sacrificial patterns respectively. The sacrificial patterns are removed. Layouts of the spacers are transferred into the substrate, so that a plurality of fin structures are formed in the substrate. The spacers are then removed. The present invention also provides a semiconductor structure formed by said semiconductor process.

主权项

1: A semiconductor process, comprising:
forming a sacrificial layer on a substrate; etching the sacrificial layer and the substrate to form a first trench in the sacrificial layer and the substrate; filling a first isolation material in the first trench, thereby a first isolation structure being formed; patterning the sacrificial layer to form a plurality of sacrificial patterns; forming a plurality of spacers beside the sacrificial patterns respectively; removing the sacrificial patterns; transferring layouts of the spacers to the substrate to form a plurality of fin structures in the substrate; and removing the spacers.