PULSED NITRIDE ENCAPSULATION

摘要

Aspects of the disclosure pertain to methods of forming conformal liners on patterned substrates having high height-to-width aspect ratio gaps. Layers formed according to embodiments outlined herein have been found to inhibit diffusion and electrical leakage across the conformal liners. The liners may comprise nitrogen and be described as nitride layers according to embodiments. The conformal liners may comprise silicon and nitrogen and may consist of silicon and nitrogen in embodiments. Methods described herein may comprise introducing a silicon-containing precursor and a nitrogen-containing precursor into a substrate processing region and concurrently applying a pulsed plasma power capacitively to the substrate processing region to form the conformal layer.

主权项

1. A method of forming a conformal silicon nitride layer on a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber; flowing a silicon-containing precursor into the substrate processing region; combining the silicon-containing precursor with a nitrogen-containing precursor; forming a pulsed plasma by applying a square wave of RF power to the substrate processing region; exciting the combination of the silicon-containing precursor and the nitrogen-containing precursor in the pulsed plasma; and forming the conformal silicon nitride layer, wherein the conformal silicon nitride layer comprises both silicon and nitrogen.