发明名称 RF MAGNETRON SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a RF sputtering apparatus for manufacturing a laminate substrate for epitaxial growth, the apparatus being capable of forming an oxide layer with an improved crystal orientation compared to an uppermost surface layer of a metal substrate, and further manufacturing more rapidly and efficiently.SOLUTION: A RF magnetron sputtering apparatus 1A includes: a transportation part 30 for transporting a band-shaped metal substrate 20; an oxide target 10 arranged so as to face the metal substrate 20; and a mask 40 arranged between the metal substrate 20 and the target 10, the mask having an opening part 40a. The opening part 40a is formed such that when deposition is performed through the opening part 40a on the metal substrate 20, an angle between a perpendicular line at a deposit position on the metal substrate 20 and a line leading to a point of zero magnet flux density in a perpendicular direction in an area located at a shortest position from the deposit position in the area partitioned by the opening part 40a on the target 10 is within 15°.SELECTED DRAWING: Figure 1
申请公布号 JP2016196678(A) 申请公布日期 2016.11.24
申请号 JP20150076204 申请日期 2015.04.02
申请人 TOYO KOHAN CO LTD 发明人 HASHIMOTO YUSUKE;KUROKAWA TEPPEI;OKAYAMA HIRONAO
分类号 C23C14/35;C23C14/08 主分类号 C23C14/35
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