发明名称 |
METHODS AND APPARATUSES FOR ERROR CORRECTION |
摘要 |
Embodiments of the present invention disclose methods and apparatuses for correcting errors in data stored in a solid state device. The solid state device may have a plurality of bits stored in multi-level memory cells. The method may include identifying one or more errors in a plurality of memory cells. The method may further include converting the erroneous cells to erasures. The method may further include correcting the one or more erasures. |
申请公布号 |
US2016350184(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201514721913 |
申请日期 |
2015.05.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VARANASI CHANDRA C. |
分类号 |
G06F11/10;H03M13/15;G11C29/52 |
主分类号 |
G06F11/10 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus comprising:
a memory device having a plurality of multi-level cells; an encoder circuit coupled to the memory device and configured to store a plurality of data bits in the plurality of multi-level cells; and a decoder circuit coupled to the memory device and configured to identify one or more erroneous cells in the plurality of multi-level cells, convert the erroneous cells to erasures, and correct the erasures. |
地址 |
BOISE ID US |