| 摘要 |
PROBLEM TO BE SOLVED: To provide a film growth start reinforcing method not to permit deposition of a smooth, uniform and closed film (or a layer) on a surface of a chemically stable substrate. SOLUTION: The present invention relates to an integrated circuit (IC) manufacturing process, and more specifically, it relates to the surface treatment of a silicon dioxide layer, a silicon nitride oxide layer or the like for a subsequent layer of a metal, a metal oxide, and/or metal carbide. The present invention also relates to a gate of high k to be obtained by the method of the present invention. COPYRIGHT: (C)2006,JPO&NCIPI
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