| 摘要 |
A semiconductor device including (a) a base plate, (b) an insulation substrate that consists of an insulator plate with a front electrode and a back electrode bonded thereon and is fixed onto the base plate via the back electrode, (c) a semiconductor element fastened onto the insulation substrate via the front electrode, (d) an insulating cover that covers the semiconductor element and (e) electrodes that are led from the semiconductor element to the outside of the insulating cover. The back electrode is larger than the insulator plate, the base plate has a through hole that is smaller than the back electrode and larger than the insulator plate. The insulation substrate is positioned in the through hole and is fastened onto the back surface of the base plate via the periphery of the back electrode. Since the insulation substrate makes direct contact with the heat sink without the base plate intervening therebetween, thermal resistance between the semiconductor element and the heat sink is decreased. Also since bending stress to be generated in the insulator plate when fastening the heat sink onto the base plate by screwing is mitigated by the back electrode, dielectric breakdown in the semiconductor device due to cracks in the insulator plate can be restrained from taking place. <IMAGE> |
