| 摘要 |
PROBLEM TO BE SOLVED: To provide a high voltage element capable of enhancing integration, and to provide a method for manufacturing the same. SOLUTION: The high voltage element includes drift regions formed inside a substrate, an element separation film formed inside the substrate to be deeper than the drift region, a gate electrode formed over the substrate and source and drain regions formed inside the drift regions on both sides of the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
|
