Compensation Devices

摘要

Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for calibration purposes to minimize a net doping concentration. In other cases, alternatingly n- and p-doped layers are then deposited. In other embodiments, an n/p-codoped layer is deposited in a trench where n- and p-dopants have different diffusion behavior. To obtain different doping profiles, a heat treatment may be performed.

主权项

1. An apparatus comprising:
a layer forming apparatus configured to form semiconductor layers; an n-dopant source to supply an n-dopant to the layer forming apparatus; a p-dopant source to supply a p-dopant to the layer forming apparatus; a controller configured to control an amount of n-doping and an amount of p-doping; and a dopant concentration measurement device; wherein the controller is configured to control the n-dopant source, the p-dopant source and the layer forming apparatus to form an n/p-codoped calibration layer, wherein the dopant concentration measurement device is configured to measure a net dopant concentration of the calibration layer, and wherein the controller is configured to adjust an amount of n-dopant relative to an amount of p-dopant based on the net dopant concentration.