METAL STRAP FOR DRAM/FINFET COMBINATION

摘要

A metal strap is formed in a middle-of-line (MOL) process for communication between an eDRAM and a FinFET. An oxide is deposited in a trench over the eDRAM to prevent development of an epitaxial film prior to formation of the metal strap. The result is an epiless eDRAM strap in a FinFET.

主权项

1. A method comprising:
providing a semiconductor substrate having a storage capacitor formed in a deep trench; depositing a dielectric layer into a recess adjacent to a conductive region of the storage capacitor; forming a fin of a transistor including a portion of the dielectric layer deposited into the recess; etching an opening through the dielectric layer over the conductive region; and depositing a metal layer into the opening and on the conductive region.