APPARATUS AND METHODS FOR MOS CAPACITOR STRUCTURES FOR VARIABLE CAPACITOR ARRAYS

摘要

A capacitor structure is described. A capacitor structure including a substrate and at least one device formed on the substrate. The device including first and second sections. Each of the first and second sections including a plurality of source/drain regions formed in the substrate and a plurality of gates formed above the substrate such that each of the plurality of gates is formed between each pair of source/drain regions to form a section channel between each pair of source/drain regions. The plurality of gates of the first and second sections are coupled with each other.

主权项

1. A capacitor structure comprising:
a substrate; and at least one device formed on said substrate, said device including a first section and a second section, said first section including:
a first plurality of source/drain regions formed in said substrate, anda first plurality of gates formed above said substrate such that each of said first plurality of gates is formed between each pair of source/drain regions of said first plurality of source/drain regions to form a first section channel between said each pair of source/drain regions, said second section including:
a second plurality of source/drain regions formed in said substrate, anda second plurality of gates formed above said substrate such that each of said second plurality of gates is formed between each pair of source/drain regions of said second plurality of source/drain regions to form a second section channel between said each pair of source/drain regions, wherein said first plurality of gates are coupled with said second plurality of gates.