| 摘要 |
This semiconductor device 1 is provided with a semiconductor substrate 2 in which a through-hole 7 is formed, a first wiring 3 which is provided on a first surface 2a of the semiconductor substrate 2, an insulation layer 10 which is provided on the inner surface 7c of the through-hole 7 and the second surface 2b of the semiconductor substrate 2, and a second wiring 8 which is provided on the surface 10b of the insulation layer 10 and which is electrically connected to the first wiring 3 in an opening 10a. The surface 10b of the insulation layer 10 includes a first region 11, a second region 12, a third region 13, a fourth region 14 which is curved so as to continuously connect the first region 11 and the second region 12, and a fifth region 15 which is curved so as to continuously connect the second region 12 and the third region 13. The average inclination angle of the second region 12 is less than the average inclination angle of the first region 11, and is also less than the average inclination angle of the inner surface 7c. |
