THIN-FILM TRANSISTOR AND DISPLAY PANEL

摘要

Provided are a thin-film transistor with which an off-current can be reduced, and a display panel provided with the thin-film transistor.　The thin-film transistor is provided with a gate electrode formed on the surface of a substrate, a polysilicon layer formed on the upper side of the gate electrode, an amorphous silicon layer formed so as to cover the polysilicon layer, an n+ silicon layer formed on the upper side of the amorphous silicon layer, and a source electrode and drain electrode that are formed on the n+ silicon layer. In a state of projection where the polysilicon layer, the source electrode, and the drain electrode are projected onto the surface of the substrate, there is overlap between a part of the polysilicon layer and a part of each of the source electrode and drain electrode. In the state of projection, the minimum dimension of the polysilicon layer located between the source electrode and drain electrode, such dimension being in the width direction orthogonal to the length direction between the source electrode and drain electrode, is smaller than the dimensions of the source electrode and drain electrode in the width direction.