| 主权项 |
1. A quantum cascade semiconductor laser comprising:
a substrate including a first region, a second region, and a third region that are arranged along a first axis, the third region being provided between the first region and the second region; and a semiconductor region provided on a principal surface of the substrate, the semiconductor region including a mesa waveguide provided on the third region of the substrate, a first burying region provided on a first side surface of the mesa waveguide and the first region of the substrate, and a second burying region provided on a second side surface of the mesa waveguide and the second region of the substrate, wherein each of the first burying region and the second burying region includes a plurality of laminate regions and a plurality of bulk semiconductor regions that are alternately arrayed in a direction of the first axis, the laminate regions are separated from each other by the bulk semiconductor regions, the bulk semiconductor regions are provided on side surfaces of the laminate regions so as to embed the laminate regions, and each of the laminate regions includes a semiconductor laminate structure having a plurality of semiconductor layers. |
