Multi-Color Light Emitting Structures with Fixed or Variable Emission Color

摘要

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

主权项

1. A multi-layer semiconductor multicolor light emitting structure comprising:
a first quantum confinement structure for emitting light of a first wavelength; a first intermediate carrier blocking layer having a first predetermined band-gap and band-offsets; and a second quantum confinement structure for emitting light of a second wavelength, wherein the first intermediate carrier blocking layer is disposed between the first quantum confinement structure and the second quantum confinement structure.