| 摘要 |
A storage device of an embodiment includes a first conductive layer containing a first element selected from the group consisting of Si, Ge, and a metal element, a second conductive layer including a first region containing a first metal element and carbon or nitrogen, a second region containing a second metal element and carbon or nitrogen, and a third region provided between the first region and the second region, the third region containing a third metal element, the standard free energy of formation of an oxide of the third metal element being smaller than the standard free energy of formation of an oxide of the first element, a ferroelectric layer provided between the first conductive layer and the second conductive layer, and a paraelectric layer provided between the first conductive layer and the ferroelectric layer. |
| 主权项 |
1. A storage device comprising:
a first conductive layer containing a first element selected from the group consisting of Si, Ge, and a metal element; a second conductive layer including a first region containing a first metal element and at least one of carbon and nitrogen, a second region containing a second metal element and at least one of carbon and nitrogen, and a third region provided between the first region and the second region, the third region containing a third metal element, a standard free energy of formation of an oxide of the third metal element being smaller than a standard free energy of formation of an oxide of the first element; a ferroelectric layer provided between the first conductive layer and the second conductive layer; and a paraelectric layer provided between the first conductive layer and the ferroelectric layer. |
