发明名称 |
Misalignment test structure and method thereof |
摘要 |
A test structure and a test method for determining misalignment occurring in integrated circuit manufacturing processes are provided. The test structure includes a first conductive layer having a first testing structure and a second testing structure, a dielectric layer thereon, and a second conductive layer on the dielectric layer. The second conductive layer includes a third testing structure and a fourth testing structure, which respectively overlap a portion of the first testing structure and the second testing structure in a first direction and a second direction. The first direction is opposite to the second direction. The method includes a step of measuring the electrical characteristic between the first and the second conductive layers to calculate an offset amount caused by the misalignment.
|
申请公布号 |
US2006128041(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20060339687 |
申请日期 |
2006.01.26 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HUANG CHIEN-CHANG;WU TIE-JIANG;HUANG CHIN-LING;TING YU-WEI;JIANG BO-CHING |
分类号 |
H01L21/66;G03F7/20;G03F9/00;H01L23/544 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|