| 发明名称 | Non-crystalline inorganic light emitting diode | ||
| 摘要 | Non-crystalline inorganic light emitting diode. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a non-crystalline inorganic light emission layer and first and second semiconducting non-crystalline inorganic charge transport layers surrounding the light emission layer. The light emission layer may be amorphous. The charge transport layers may be configured to inject one type of charge carrier and block the other type of charge carrier. | ||
| 申请公布号 | US9461196(B2) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201514605550 | 申请日期 | 2015.01.26 |
| 申请人 | Invensas Corporation | 发明人 | Mohammed Ilyas;Wang Liang |
| 分类号 | H01L33/10;H01L33/00;H01L33/18;H01L33/16;H05B33/14;H05B33/22;H01L33/14;H01L33/36;H01L33/48 | 主分类号 | H01L33/10 |
| 代理机构 | Forefront IP Lawgroup, PLLC | 代理人 | Forefront IP Lawgroup, PLLC |
| 主权项 | 1. An article of manufacture comprising: a light emitting diode comprising: a non-crystalline inorganic light emission layer; and first and second semiconducting non-crystalline inorganic charge transport layers surrounding said light emission layer, wherein said first and second semiconducting charge transport layers are doped to opposite conduction types. | ||
| 地址 | San Jose CA US | ||