| 发明名称 | Semiconductor workpiece having a semiconductor substrate with at least two chip areas | ||
| 摘要 | A semiconductor workpiece includes a semiconductor substrate, at least two chip areas, components of semiconductor devices being formed in the semiconductor substrate in the at least two chip areas, and a separation trench disposed between adjacent chip areas. The separation trench is formed in a first main surface of the semiconductor substrate and extends from the first main surface to a second main surface of the semiconductor substrate. The second main surface is disposed opposite to the first main surface. The separation trench is filled with at least one sacrificial material. | ||
| 申请公布号 | US9461004(B2) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201514725794 | 申请日期 | 2015.05.29 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Meiser Andreas;Zundel Markus;Poelzl Martin;Ganitzer Paul;Ehrentraut Georg |
| 分类号 | H01L21/78;H01L23/00;H01L21/762;H01L23/544;H01L21/822;H01L23/538;H01L21/784;H01L29/78 | 主分类号 | H01L21/78 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor workpiece, comprising: a semiconductor substrate; at least two chip areas, components of semiconductor devices being formed in the semiconductor substrate in the at least two chip areas; a separation trench disposed between adjacent chip areas, the separation trench being formed in a first main surface of the semiconductor substrate and extending from the first main surface to a second main surface of the semiconductor substrate, the second main surface being disposed opposite to the first main surface, the separation trench being filled with at least one sacrificial material; and a kerf area disposed between adjacent chip areas. | ||
| 地址 | Villach AT | ||