| 摘要 |
PROBLEM TO BE SOLVED: To perform a data reading operation only by accessing a selection memory cell. SOLUTION: During data reading, a bias magnetic field of a level that will not destroy stored data is applied to a selection memory cell. With the application of the bias magnetic field, a data-line voltage difference between before and after the change of electric resistance of the selection memory cell by polarity according to a stored data level is amplified by a sense amplifier, and thus data reading is performed by only accessing the selection memory cell. Additionally, an activated write digit line WDL is driven by a power supply voltage Vcc1, which is higher than a power supply voltage Vcc2 of other peripheral circuits that include a data reading circuit system. COPYRIGHT: (C)2009,JPO&INPIT
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