RECESSED CHANNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A recess channel transistor and a manufacturing method thereof are provided to reduce a source/drain junction leakage current by preventing the direct contact between the channel doping region and the source/drain region. A device isolation pattern(102) defining an active region is formed in a single crystal silicon substrate(100). A recess part(106a) is generated in the single crystal silicon substrate of the active region. A channel doping region(108a) is formed in the bottom of the recess part. The threshold voltage of the recess channel transistor is controlled according to the doping density of the channel doping region. A gate structure including a gate insulating pattern and a gate electrode(114) is reclaimed inside the recess part. The gate electrode is formed in the upper part of the gate insulating layer. The source/drain regions are formed under the surface of the substrate of both sides of the recess part.