Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti

摘要

A method that comprises performing an atomic layer deposition sequence comprising at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle comprising introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously. The invention also relates to an apparatus with a reaction chamber (210), a metal precursor source (41 ) and a processing gas source (40). Objects of the invention are to achieve a fast atomic layer deposition and a lowered required processing temperature.