发明名称 SELF-ALIGNED VIA INTERCONNECT STRUCTURES
摘要 A self-aligned via interconnect structures and methods of manufacturing thereof are disclosed. The method includes forming a wiring structure in a dielectric material. The method further includes forming a cap layer over a surface of the wiring structure and the dielectric material. The method further includes forming an opening in the cap layer to expose a portion of the wiring structure. The method further includes selectively growing a metal or metal-alloy via interconnect structure material on the exposed portion of the wiring structure, through the opening in the cap layer. The method further includes forming an upper wiring structure in electrical contact with the metal or metal-alloy via interconnect structure.
申请公布号 US2016197038(A1) 申请公布日期 2016.07.07
申请号 US201615070231 申请日期 2016.03.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BACKES Benjamin C.;COHEN Brian A.;NAG Joyeeta;RADENS Carl J.
分类号 H01L23/522;H01L23/532;H01L23/528 主分类号 H01L23/522
代理机构 代理人
主权项 1. A structure comprising a self-aligned cobalt interconnect structure between and in electrical contact with an upper wiring layer and a lower wiring layer, the self-aligned cobalt interconnect structure is an overgrowth of cobalt within an opening of a dielectric cap material on the lower wiring layer.
地址 Armonk NY US