| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel type semiconductor device capable of reducing power consumption and obtaining good SS characteristics.SOLUTION: A semiconductor device according to an embodiment comprises a semiconductor layer 20. A gate insulating film 30 is provided on a surface of the semiconductor layer. A gate electrode 40 includes a first gate part 41 and a second gate part 42. The first gate part and the second gate part are provided on the semiconductor layer via the gate insulating film, have work functions different from each other, and are electrically connected with each other. A drain layer 50 of a first conductivity type is provided in the semiconductor layer at one end side of the gate electrode. A source layer 60 of a second conductivity type is provided in the semiconductor layer at the other end side of the gate electrode and at a lower side of the gate electrode. An impurity concentration of the source layer at the lower side of the gate electrode is substantially uniform.SELECTED DRAWING: Figure 1 |
