| 摘要 |
A deposition method, comprising depositing a transition metal ALD layer by an ALD (atomic layer deposition) method on an electronic product in an ALD reactor, and depositing a graphene ALD layer (12) on top of the transition metal ALD layer by an ALD method using the transition metal ALD layer as a seed layer (11). The electronic product may be a product, such as a transistor (30) with a gate (32) and a gate dielectric (31). |
