| 发明名称 |
MECHANISMS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH FEATURE OPENING |
| 摘要 |
A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a semiconductor substrate and forming a hard mask layer over the material layer. The hard mask layer contains metal. The method also includes forming an opening in the hard mask layer using a plasma etching process, and a gas mixture used in the plasma etching process includes a nitrogen-containing gas, a halogen-containing gas, and a carbon-containing gas. The method further includes etching the material layer through the opening in the hard mask layer to form a feature opening in the material layer. |
| 申请公布号 |
US2016358819(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615243663 |
申请日期 |
2016.08.22 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
CHEN Yungtzu;CHEN Yu-Shu;LIU Yu-Cheng |
| 分类号 |
H01L21/768;H01L21/311;H01L21/02 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device structure, comprising:
forming a material layer over a semiconductor substrate; forming a hard mask layer over the material layer, wherein the hard mask layer contains metal; forming an opening in the hard mask layer using a plasma etching process, wherein a gas mixture used in the plasma etching process includes a nitrogen-containing gas, a halogen-containing gas, and a carbon-containing gas; and etching the material layer through the opening in the hard mask layer to form a feature opening in the material layer. |
| 地址 |
Hsin-Chu TW |
