PLASMA PROCESSING APPARATUS

摘要

Disclosed is a plasma processing apparatus including: a processing container that includes a bottom portion and a sidewall and defines a processing space; a microwave generator that generates microwaves; and a dielectric window attached to the sidewall of the processing container. The dielectric window is supported by a support surface formed in an upper end portion of the sidewall or a support surface formed in a conductor member disposed in the upper end portion of the sidewall, and includes a non-facing portion that does not face the processing space. Corner portions are formed on surfaces of the non-facing portion to fix a position of a node of standing waves. A distance from a sidewall corner portion to at least one of the plurality of corner portions is a distance in which a position of another node of the standing waves overlaps with a position of the sidewall corner portion.

主权项

1. A plasma processing apparatus comprising:
a processing container including a bottom portion and a sidewall and configured to define a processing space, the processing container being made of a conductor; a microwave generator configured to generate microwaves for plasma excitation; and a dielectric window attached to the sidewall of the processing container to close the processing container, and configured to introduce the microwaves into the processing space, wherein the dielectric window is supported by a support surface formed in an upper end portion of the sidewall or a support surface formed in a conductor member disposed in the upper end portion of the sidewall, and includes a non-facing portion that does not face the processing space, a plurality of corner portions are formed on surfaces of the non-facing portion to fix a position of a node of standing waves obtained when the microwaves are reflected, and a distance from a sidewall corner portion to at least one of the plurality of corner portions is a distance in which a position of another node of the standing waves overlaps with a position of the sidewall corner portion, the sidewall corner portion being formed by the support surface of the sidewall or the support surface of the conductor member, and an inner surface of the sidewall or the conductor member that faces the processing space.