| 摘要 |
The purpose of the present invention is to obtain a metal oxide film formation method which makes it possible to produce a high-quality metal oxide film while increasing production efficiency. The film formation method according to the present invention involves: obtaining a starting material solution mist (M1) by misting a starting material solution (14) that contains aluminum, a metal element, inside a solution vessel (15); obtaining an aid agent mist (M2) by misting a reaction aid solution (24), which contains a reaction aid agent for use in forming aluminum oxide, inside a solution vessel (25) that is independent from the solution vessel (15); supplying the starting material solution mist (M1) and the aid agent mist (M2) to a nozzle (12) provided inside a reaction vessel (11) via channels (L1), (L2); and thereafter, obtaining a mixture mist (M3) by mixing the starting material solution mist (M1) and the aid agent mist (M2) inside the nozzle (12), and supplying the mixture mist (M3) onto the rear surface of a heated P-type silicon substrate (4). |
