| 摘要 |
PURPOSE: A static RAM cell is provided to reduce a size of liquid crystal driver by using NMOS pass transistor instead of 3 phase inverter CONSTITUTION: The static RAM cell comprises a first transistor(MN3) and a second transistor(MN4), a latch type of inverters(20,22), a third transistor(MN5), a biasing unit(30) and a sense amplification unit(40). The first and second transistor have a gate connected with word line, respectively, and connect in series between a bit line and a inverted bit line. The latch type of inverters are arranged back to back between the first and the second transistor. The third transistor passes the data stored in the latch type of inventors in response to an address. The biasing unit supplies a bias voltage. The sense amplification unit compares the bias voltage with the data which pass the third transistor and outputs the result from the comparison as RAM data. Thereby it is impossible to reduce the number of the transistors built in the static RAM cell so that it can reduce the size of liquid crystal driver having static RAM cell.
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