| 摘要 |
PROBLEM TO BE SOLVED: To provide suitable conditions when a monocrystal semiconductor layer of a composite substrate is reduced in thickness by sacrificial oxidation. SOLUTION: Under conditions where a maximum etched amount does not exceed the total value of the minimum film thickness of a sacrificial oxide film and the film thickness of the monocrystal semiconductor layer, wet drying is performed after dry etching, whereby the sacrificial oxide film can completely be removed. COPYRIGHT: (C)2005,JPO&NCIPI |
