| 摘要 |
The present invention provides for a memory device comprising a bulk substrate. A first lightly doped region ( 220 ) is formed in the bulk substrate ( 210 ). A first active region ( 220 ) is formed in the first lightly doped region ( 220 ). A second lightly doped region ( 320 ) is formed in the bulk substrate ( 310 ). A second active region ( 340 ) is formed in the second lightly doped region ( 320 ). A third active region ( 340 ) is formed in the bulk substrate ( 310 ). An oxide layer ( 230, 330 ) is disposed outwardly from the bulk substrate ( 210, 310 ) and a floating gate layer ( 250, 350 ) is disposed outwardly from the oxide layer ( 230, 330 ).
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