发明名称 |
Method of manufacturing a metal-insulator-metal capacitor |
摘要 |
The present invention provides method of manufacturing a metal-insulator-metal capacitor ( 100 ). A method of manufacturing includes depositing a first refractory metal layer ( 105 ) over a semiconductor substrate ( 110 ). The first refractory metal layer ( 105 ) over a capacitor region ( 200 ) of the semiconductor substrate ( 110 ) is removed and a second refractory metal ( 300 ) is deposited over the capacitor region ( 200 ). Other aspects of the present invention include a metal-insulator-metal capacitor ( 900 ) and a method of manufacturing an integrated circuit ( 1000 ).
|
申请公布号 |
US2006128109(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20060352847 |
申请日期 |
2006.02.13 |
申请人 |
PHAN TONY T;MALONE FARRIS D |
发明人 |
PHAN TONY T.;MALONE FARRIS D. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|