发明名称 INTEGRATED SYSTEM FOR SEMICONDUCTOR SUBSTRATE PROCESSING USING LIQUID PHASE METAL DEPOSITION
摘要 <p>A system for processing a semiconductor substrate during fabrication of semiconductor devices provides a plurality of semiconductor substrate processing stations in a physically integrated system, as well as a semiconductor substrate transport system for transporting a semiconductor substrate between the respective processing stations. In particular, the processing system according to the present invention favors the use of liquid phase process steps, particularly deposition process steps, instead of gas or vapor phase processing. Even more particularly, the system contemplates deposition of a metallic barrier layer (30) on the semiconductor substrate in liquid phase.</p>
申请公布号 WO2007095973(A1) 申请公布日期 2007.08.30
申请号 WO2006EP02853 申请日期 2006.02.24
申请人 FREESCALE SEMICONDUCTOR, INC.;FARKAS, JANOS;GOLDBERG, CINDY;YU, KATIE;KORDIC, SRDJAN 发明人 FARKAS, JANOS;GOLDBERG, CINDY;YU, KATIE;KORDIC, SRDJAN
分类号 H01L21/00;C23C16/00;C23C16/40;H01L21/312 主分类号 H01L21/00
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