发明名称 |
INTEGRATED SYSTEM FOR SEMICONDUCTOR SUBSTRATE PROCESSING USING LIQUID PHASE METAL DEPOSITION |
摘要 |
<p>A system for processing a semiconductor substrate during fabrication of semiconductor devices provides a plurality of semiconductor substrate processing stations in a physically integrated system, as well as a semiconductor substrate transport system for transporting a semiconductor substrate between the respective processing stations. In particular, the processing system according to the present invention favors the use of liquid phase process steps, particularly deposition process steps, instead of gas or vapor phase processing. Even more particularly, the system contemplates deposition of a metallic barrier layer (30) on the semiconductor substrate in liquid phase.</p> |
申请公布号 |
WO2007095973(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
WO2006EP02853 |
申请日期 |
2006.02.24 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;FARKAS, JANOS;GOLDBERG, CINDY;YU, KATIE;KORDIC, SRDJAN |
发明人 |
FARKAS, JANOS;GOLDBERG, CINDY;YU, KATIE;KORDIC, SRDJAN |
分类号 |
H01L21/00;C23C16/00;C23C16/40;H01L21/312 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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